data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 2.5v drive nch mosfet ru1l002sn ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance.2) low voltage drive (2.5v drive). 3) small package (umt3f). ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 ru1l002sn ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 250 ma i dp ? 1 a continuous i s 125 ma i sp 1 a power dissipation p d 200 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 625 ? c / w * each terminal mounted on a recommended land pulsed parameter type source current(body diode) drain current parameter pulsed umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 (1) gate(2) source (3) drain abbreviated symbol : rk *2 *1*1 * ? 2 ? 1 (3) (1) (2) ? 1 esd protection diode ? 2 body diode 1/6 2011.08 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet ru1l002sn ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =60v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.3 v v ds =10v, i d =1ma - 1.7 2.4 i d =250ma, v gs =10v - 2.1 3.0 i d =250ma, v gs =4.5v - 2.3 3.2 i d =250ma, v gs =4.0v - 3.0 12.0 i d =10ma, v gs =2.5v forward transfer admittance l y fs l 0.25 - - s v ds =10v, i d =250ma input capacitance c iss - 15 - pf v ds =25v output capacitance c oss - 4.5 - pf v gs =0v reverse transfer capacitance c rss - 2.0 - pf f=1mhz turn-on delay time t d(on) - 3.5 - ns v dd 30v, i d =100ma rise time t r -5-n s v gs =10v turn-off delay time t d(off) -1 8-n s fall time t f -2 8-n s *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =250ma, v gs =0v *pulsed parameter conditions conditions ? parameter static drain-source on-stateresistance r ds (on) * ** * * * *** 2/6 2011.08 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet ru1l002sn ? electrical characteristic curves (ta=25 ? c) 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v ta= 25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain-source voltage : v ds [v] 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 v gs = 2.5v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v ta= 25 c pulsed fig.2 typical output characteristics( ) drain-source voltage : v ds [v] drain current : i d [a] 0.0001 0.001 0.01 0.1 1 0 1 2 3 ta=125 c ta=75 c ta=25 c ta= - 25 c v ds = 10v pulsed fig.3 typical transfer characteristics drain current : i d [a] gate-source voltage : v gs [v] 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 2.5v v gs = 4.0v v gs = 4.5v v gs = 10v ta= 25 c pulsed fig.4 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ w ] 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ w ] 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ w ] 3/6 2011.08 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet ru1l002sn 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 4.0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ w ] 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 2.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ w ] 0.01 0.1 1 0.001 0.01 0.1 1 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.9 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] 0.001 0.01 0.1 1 0 0.5 1 1.5 ta=125 c ta=75 c ta=25 c ta= - 25 c v gs =0v pulsed fig.10 reverse drain current vs. sourse-drain voltage reverse drain current : is [a] source-drain voltage : v sd [v] 0 2 4 6 8 0 2.5 5 7.5 10 i d = 0.25a i d = 0.01a ta=25 c pulsed fig.11 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : r ds (on)[ w ] gate-source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 t f t r t d(off) t d(on) ta=25 c v dd = 30v v gs =10v r g =10 w pulsed fig.12 switching characteristics switching time : t [ns] drain-current : i d [a] 4/6 2011.08 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet ru1l002sn 1 10 100 0.01 0.1 1 10 100 fig.13 typical capacitance vs. drain-source voltage drain-source voltage : v ds [v] capacitance : c [pf] ta=25 c f=1mhz v gs =0v ciss coss crss 5/6 2011.08 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet ru1l002sn ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design es d protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 6/6 2011.08 - rev.a downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes downloaded from: http:///
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